512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件：214.73 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件：200.92 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summary description The M36P0R9070E0 combines two memory devices in one Multi-Chip Package: ● 512-Mbit Multiple Bank Flash memory (the M58PR512J). ● 128 Mbit PSRAM (the M69KB128AB). The purpose of this document is to describe how the two memory components operate with respect to each other. It

文件：468.7 Kbytes 页数：23 Pages

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

文件：214.73 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

文件：200.92 Kbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体