MIKRON M360

TYPICAL APPLICATIONS  Sapphire probe optical pyrometer calibrations  Infrared temperature sensors  Infrared thermal imaging systems  Spectrographic analyzers  Spectral radiometers  Heat flux meters

文件：260.87 Kbytes 页数：4 Pages

ADVANCEDENERGY

先进能源工业

4K(512 x 8) HIGH-SPEED PROM

文件：151.42 Kbytes 页数：2 Pages

INTEL

英特尔

UNINTERRUPTIBLE POWER SUPPLY

PRODUCT HIGHLIGHTS • FULL COMPLIANCE WITH MIL-STD-1399 (SECTION 300B) • 3U RACKMOUNT • 2.5KW/3KVA UPS • LONG HOLDUP TIME 2 HR @ 1KW/ 1 HR @ 2KW M362-4 MAIN FEATURES: • 19”, 3U Rack-mount, 18.25” deep with recessed I/O connectors to fit in shallow racks. • Full Compliance with MIL-STD-1399

文件：583.37 Kbytes 页数：9 Pages

ENERCON

4K(512 x 8) HIGH-SPEED PROM

文件：151.42 Kbytes 页数：2 Pages

INTEL

英特尔

PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)

PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TC80/ TC1H/ TC1L • # of rows in module : 1 row • # of banks in component : 4 banks • Feature : 1,000mil height & single sided component • Refresh : 4K/64m

文件：67.1 Kbytes 页数：7 Pages

SAMSUNG

三星

PC133/PC100 Unbuffered DIMM

GENERAL DESCRIPTION The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S2953MTS consists of sixteen CMOS 64M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

文件：135.56 Kbytes 页数：9 Pages

SAMSUNG

三星

PC133/PC100 Unbuffered DIMM

GENERAL DESCRIPTION The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S2953MTS consists of sixteen CMOS 64M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

文件：135.56 Kbytes 页数：9 Pages

SAMSUNG

三星

PC133/PC100 Unbuffered DIMM

GENERAL DESCRIPTION The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S2953MTS consists of sixteen CMOS 64M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

文件：135.56 Kbytes 页数：9 Pages

SAMSUNG

三星

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M366S3253DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy su

文件：159.58 Kbytes 页数：11 Pages

SAMSUNG

三星

PC133/PC100 Unbuffered DIMM

GENERAL DESCRIPTION The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S2953MTS consists of sixteen CMOS 64M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

文件：135.56 Kbytes 页数：9 Pages

SAMSUNG

三星