| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt 文件：328.77 Kbytes 页数：46 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt 文件：328.77 Kbytes 页数：46 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt 文件：328.77 Kbytes 页数：46 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt 文件：328.77 Kbytes 页数：46 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit 文件：834.14 Kbytes 页数：52 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit 文件：834.14 Kbytes 页数：52 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit 文件：834.14 Kbytes 页数：52 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit 文件：834.14 Kbytes 页数：52 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARY DESCRIPTION The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM. The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied wit 文件：834.14 Kbytes 页数：52 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package. FEATURES SUMMARY ■ SUPPLY VOLTAGE – VDDF = VDDS =1.65V to 2.2V – VPPF = 12V for Fast Program (opt 文件：328.77 Kbytes 页数：46 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
产品属性
- 产品编号：
SM36-02HTG
- 制造商：
Littelfuse Inc.
- 类别：
电路保护 > TVS - 二极管
- 系列：
Automotive, AEC-Q101, SM, SPA®
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 类型：
齐纳
- 电压 - 反向断态（典型值）：
36V（最大）
- 不同 Ipp 时电压 - 箝位（最大值）：
52V
- 电流 - 峰值脉冲 (10/1000µs)：
4A（8/20µs）
- 功率 - 峰值脉冲：
400W
- 电源线路保护：
无
- 应用：
汽车级
- 不同频率时电容：
50pF @ 1MHz
- 工作温度：
-40°C ~ 150°C
- 安装类型：
表面贴装型
- 封装/外壳：
TO-236-3，SC-59，SOT-23-3
- 供应商器件封装：
SOT-23-3
- 描述：
TVS DIODE 36VWM 52VC SOT23-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse(美国力特) |
24+ |
N/A |
9620 |
原装正品现货支持实单 |
询价 | ||
UMW(友台半导体) |
24+ |
SOT-23 |
9000 |
加QQ:78517935原装正品有单必成 |
询价 | ||
LITTELFUSE |
25+ |
SOT-23-3 |
7240 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Littelfuse(力特) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
LITTELFUSE/力特 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
LITTELFUSE/力特 |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
LITTELFUSE |
21+ |
标准封装 |
74 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
询价 | ||
LITTELFUSE/力特 |
1849+ |
SOT-23 |
190 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Littelfus |
SOT23-3 |
16230 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Littelfuse |
24+ |
SOT23-3 |
14280 |
强势渠道订货 7-10天 |
询价 |
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