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M36W0R6040T0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R6040T0andM36W0R6040B0areMultipleMemoryProductswhichcombinetwomemorydevices;a64-Mbit,MultipleBankFlashmemories,theM58WR064FT/B,anda16-MbitPseudoSRAM,theM69AR024B.Recommendedoperatingconditionsdonotallowmorethanonememorytobeacti

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050B1

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050B1

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W0R6050B1ZAQE

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050B1ZAQE

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W0R6050B1ZAQF

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050B1ZAQF

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W0R6050T1

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W0R6050T1

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050T1ZAQE

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050T1ZAQE

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W0R6050T1ZAQF

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W0R6050T1ZAQF

64 Mbit (4 Mb 횞16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 횞16) PSRAM, multi-chip package

Description TheM36W0R6050T1andM36W0R6050B1combinetwomemoriesinaMulti-ChipPackage: ●a64-Mbit,MultipleBankFlashmemory,theM58WR064HT/B,and ●a32-MbitPseudoSRAM,theM69KB048BD. Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespectto

NUMONYXNUMONYX

恒忆

M36W108

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108ismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■M36W108TandM36W108BarereplacedrespectivelybytheM36W108AT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB100ZM1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB100ZM5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB100ZM6T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB100ZN1T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M36W108AB100ZN5T

8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

DESCRIPTION TheM36W108Aismulti-chipdevicecontainingan8MbitbootblockFlashmemoryanda1MbitofSRAM.ThedeviceisofferedinthenewChipScalePackagesolutions:LBGA481.0mmballpitchandLGA481.0mmlandpitch. ■SUPPLYVOLTAGE –VCCF=VCCS=2.7Vto3.6V:forProgram,Era

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M36

  • 制造商:

    Alpha Wire

  • 功能描述:

    CBL 1COND 30AWG 300V SLATE 1000'

供应商型号品牌批号封装库存备注价格
TI
D/C
DIP
2
特价热销现货库存100%原装正品欢迎来电订购!
询价
ALI
2017+
PDGA2
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
3000
公司存货
询价
TI/TEXAS
23+
DIP
8931
询价
ALI
13+
LQFP-256
1451
原装分销
询价
ALI
1436+
30000
BGA
询价
ALI
2016+
QFP
2600
只做原装,假一罚十,公司可开17%增值税发票!
询价
TI
16+
DIP
2
原装现货假一罚十
询价
ALI
17+
QFP
10800
询价
ALI
2020+
BGA
672
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多M36供应商 更新时间2024-5-12 9:06:00