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M36W0R5020B0ZAQ

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

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M36W0R5020B0ZAQE

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

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M36W0R5020B0ZAQF

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

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M36W0R5020B0ZAQT

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

M36W0R5020T0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

M36W0R5020T0ZAQ

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

M36W0R5020T0ZAQE

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

M36W0R5020T0ZAQF

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

M36W0R5020T0ZAQT

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R5020T0 and M36W0R5020B0 combine two memory devices in a Multi-Chip Package: ■ a 32-Mbit, Multiple Bank Flash memory, the M58WR032FT/B ■ and a 4-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. FEATURES S

文件:184.58 Kbytes 页数:26 Pages

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M36W0R6030B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

SUMMARY DESCRIPTION The M36W0R6030T0 and M36W0R6030B0 combine two memory devices in a Multi-Chip Package: a 64-Mbit, Multiple Bank Flash memory, the M58WR064FT/B, and an 8-Mbit SRAM. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is o

文件:448.58 Kbytes 页数:26 Pages

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产品属性

  • 产品编号:

    SM36-02HTG

  • 制造商:

    Littelfuse Inc.

  • 类别:

    电路保护 > TVS - 二极管

  • 系列:

    Automotive, AEC-Q101, SM, SPA®

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 类型:

    齐纳

  • 电压 - 反向断态(典型值):

    36V(最大)

  • 不同 Ipp 时电压 - 箝位(最大值):

    52V

  • 电流 - 峰值脉冲 (10/1000µs):

    4A(8/20µs)

  • 功率 - 峰值脉冲:

    400W

  • 电源线路保护:

  • 应用:

    汽车级

  • 不同频率时电容:

    50pF @ 1MHz

  • 工作温度:

    -40°C ~ 150°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23-3

  • 描述:

    TVS DIODE 36VWM 52VC SOT23-3

供应商型号品牌批号封装库存备注价格
Littelfuse(美国力特)
24+
N/A
9620
原装正品现货支持实单
询价
UMW(友台半导体)
24+
SOT-23
9000
加QQ:78517935原装正品有单必成
询价
LITTELFUSE
25+
SOT-23-3
7240
就找我吧!--邀您体验愉快问购元件!
询价
Littelfuse(力特)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
LITTELFUSE/力特
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
LITTELFUSE/力特
23+
SOT23
50000
全新原装正品现货,支持订货
询价
LITTELFUSE
21+
标准封装
74
保证原装正品,需要联系张小姐 13544103396 微信同号
询价
LITTELFUSE/力特
1849+
SOT-23
190
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Littelfus
SOT23-3
16230
一级代理 原装正品假一罚十价格优势长期供货
询价
Littelfuse
24+
SOT23-3
14280
强势渠道订货 7-10天
询价
更多M36供应商 更新时间2026-1-17 14:36:00