| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
M29W400 | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
M29W400 | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory SUMMARYDESCRIPTION TheM29W400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesame | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | |
详细参数
- 型号：
M29W400
- 功能描述：
闪存 512Kx8 or 256Kx16
- RoHS：
否
- 制造商：
ON Semiconductor
- 数据总线宽度：
1 bit
- 存储类型：
Flash
- 存储容量：
2 MB
- 结构：
256 K x 8
- 接口类型：
SPI
- 电源电压-最大：
3.6 V
- 电源电压-最小：
2.3 V
- 最大工作电流：
15 mA
- 工作温度：
- 40 C to + 85 C
- 安装风格：
SMD/SMT
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
BGA |
1158 |
询价 | ||||
TOS |
23+ |
DIP |
9526 |
询价 | |||
STM |
23+ |
TSSOP/48 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
Numonyx-ADIVISIONOFMICRO |
2022 |
ICFLASH4MBIT70NS48TSOP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
ST |
2017+ |
TSOP48 |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ST |
04+ |
TSOP48 |
63994 |
全新原装进口自己库存优势 |
询价 | ||
ST |
23+ |
TSOP |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
ST |
11+ |
2900 |
询价 | ||||
原厂正品 |
23+ |
BGA |
9008 |
原装正品,假一罚十 |
询价 | ||
ST |
22+ |
BGA-M48P |
2560 |
绝对原装!现货热卖! |
询价 |
相关规格书
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相关库存
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