| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally 文件：245.97 Kbytes 页数：34 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
4Mb （512K x 8，256K x 16）
- 写周期时间 - 字，页：
90ns
- 访问时间：
90ns
- 存储器接口：
并联
- 电压 - 电源：
2.7V ~ 3.6V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
- 供应商器件封装：
48-TSOP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
BGA |
1158 |
询价 | ||||
STM |
23+ |
TSSOP/48 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
ST |
04+ |
TSOP48 |
63994 |
全新原装进口自己库存优势 |
询价 | ||
ST |
24+/25+ |
2900 |
原装正品现货库存价优 |
询价 | |||
原厂正品 |
23+ |
BGA |
9008 |
原装正品,假一罚十 |
询价 | ||
ST |
25+ |
TSSOP |
18000 |
原厂直接发货进口原装 |
询价 | ||
ST |
24+ |
QFP |
2 |
现货供应 |
询价 | ||
ST |
2016+ |
TSOP48 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST |
25+ |
TSSOP48 |
1006 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
NUMONYX |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 |
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