M29W400B-100M1R中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby-Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

■ M29W400T and M29W400B are replaced respectivelyby the M29W400BT and M29W400BB

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 90ns

■ FAST PROGRAMMING TIME

– 10µs by Byte / 16µs by Word typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29W400T: 00EEh

– Device Code, M29W400B: 00EFh