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M28F256-10B1TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10B1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10B3TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10B3TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10B6TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10B6TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10C1TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10C1TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10C3TR

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F256-10C3TR

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    M28F

  • 制造商:

    INTEL

  • 制造商全称:

    Intel Corporation

  • 功能描述:

    8 MBIT(1 MBIT x 8) FLASH MEMORY

供应商型号品牌批号封装库存备注价格
ST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
ST
23+
SOP
3700
绝对全新原装!现货!特价!请放心订购!
询价
STM
2016+
TSSOP40
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
23+
PLCC32
9526
询价
ST
24+
SOP
6980
原装现货,可开13%税票
询价
ST
24+
PLCC
15
原装现货假一罚十
询价
ST
24+
PLCC32
10000
自己现货
询价
ST
24+/25+
13
原装正品现货库存价优
询价
ST
24+
PLCC-44
4650
询价
ST
17+
DIP
6200
100%原装正品现货
询价
更多M28F供应商 更新时间2025-6-8 9:01:00