2A SURFACE MOUNT SCHOTTKY BRIDGE

文件：427.14 Kbytes 页数：3 Pages

YFWDIODE

佑风微

8 MBIT (1 MBIT x 8) FLASH MEMORY

PRODUCT OVERVIEW The M28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the M28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of

文件：401.95 Kbytes 页数：28 Pages

INTEL

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

1024K (128K x 8) CMOS FLASH MEMORY Intel’s M28F010 is a 1024-Kbit byte-wide, in-system re-writable, CMOS nonvolatile flash memory. It is organized as 131,072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package. The M28F010 is also available in 32-contact leadless chip carrier, J-

文件：317.3 Kbytes 页数：22 Pages

INTEL

英特尔

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocess

文件：197.89 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体