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M28F101

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100K1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100K3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100K6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100N1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100N3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100N6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100P1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100P3

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

M28F101-100P6

1 Mb 128K x 8, Chip Erase FLASH MEMORY

DESCRIPTION TheM28F101FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthe chiplevelandprogrammedbyte-by-byte.Itisorganisedas128Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocess

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    M28F101

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    1 Mb 128K x 8, Chip Erase FLASH MEMORY

供应商型号品牌批号封装库存备注价格
ST
24+
DIP32
3629
原装优势!房间现货!欢迎来电!
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PLCC32
16900
正规渠道,只有原装!
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23480
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25+
PLCC32
16900
原装,请咨询
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23+
PLCC-32
7000
绝对全新原装!100%保质量特价!请放心订购!
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STM
2016+
TSOP
9000
只做原装,假一罚十,公司可开17%增值税发票!
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ST
23+
PLCC-32
9526
询价
ST
2016+
PLCC
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
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ST
24+
TSSOP
6980
原装现货,可开13%税票
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ST
24+
PLCC
15
原装现货假一罚十
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更多M28F101供应商 更新时间2025-5-23 15:30:00