4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

DESCRIPTION The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used. ■ DUAL x8 and x16 ORGANIZATION ■ SMA

文件：245.46 Kbytes 页数：38 Pages

STMICROELECTRONICS

意法半导体

4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

DESCRIPTION The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used. ■ DUAL x8 and x16 ORGANIZATION ■ SMA

文件：245.46 Kbytes 页数：38 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

8 MBIT (1 MBIT x 8) FLASH MEMORY Extended Cycllng Capablllty

文件：1.17056 Mbytes 页数：14 Pages

ROCHESTER

罗切斯特

1024K (128K x 8) CMOS FLASH MEMORY

Intel

英特尔

1 Mb 128K x 8, Chip Erase FLASH MEMORY

ST

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2 Mb 256K x 8, Chip Erase FLASH MEMORY

ST

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