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M28F512-10C1中文资料PDF规格书
M28F512-10C1规格书详情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100µA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
产品属性
- 型号:
M28F512-10C1
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
512 Kbit(64Kb x8 Bulk Erase)Flasxh Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2023+ |
DIP |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ST |
22+ |
DIP |
8700 |
原装现货 |
询价 | ||
ST |
20+ |
DIP |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST/意法 |
22+ |
DIP |
165 |
原装现货假一赔十 |
询价 | ||
ST |
PLCC |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22 |
DIP |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
23+ |
PLCC |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
2022 |
SOP |
8800 |
原厂原装正品,价格超越代理 |
询价 | ||
ST |
22+ |
DIP |
30000 |
原装正品 |
询价 | ||
ST |
22+ |
DIP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |