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M28F256-90XC6TR中文资料意法半导体数据手册PDF规格书
M28F256-90XC6TR规格书详情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100µA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TSOP40 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
DIP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
DIP |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
STM |
9535 |
35 |
公司优势库存 热卖中! |
询价 | |||
ST |
DIP |
78 |
询价 | ||||
ST |
16+ |
BGA |
4000 |
进口原装现货/价格优势! |
询价 | ||
N/A |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MIT |
2020+ |
TSOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST/意法 |
22+ |
TSOP40 |
12120 |
只做进口原装现货库存 |
询价 | ||
ST |
2023+ |
TSOP |
3715 |
全新原厂原装产品、公司现货销售 |
询价 |