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型号	下载订购	功能描述	制造商上传企业	LOGO
M28F256-12XB6TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XB6TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC1TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC1TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC3TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC3TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC6TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-12XC6TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-15B1TR	文件：523.409 Kbytes Page：20 Pages	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int 文件：523.409 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M28F256-15B1TR	文件：715.28 Kbytes Page：20 Pages	256K(32K x8, Chip Erase)FLASH MEMORY 文件：715.28 Kbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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详细参数

型号：
M28F
制造商：
INTEL
制造商全称：
Intel Corporation
功能描述：
8 MBIT(1 MBIT x 8) FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福田区绿盛电子商行	M28F512-20C1	ST	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市毅创腾电子科技有限公司	M28F220-90M3	ST	23+	SOP	3700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市凌旭科技有限公司	M28F102-100N1	STM	2016+	TSSOP40	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市欧立现代科技有限公司	M28F220-90M3	ST	24+	SOP	6980	原装现货,可开13%税票	询价
深圳市弘为电子有限公司	M28F101-200K6	ST	24+	PLCC	15	原装现货假一罚十	询价
深圳市一线半导体有限公司	M28F512-15C1	ST	24+	PLCC32	10000	自己现货	询价
深圳市联世界科技有限公司	M28F101-150PI	ST	24+/25+		13	原装正品现货库存价优	询价
深圳市恒创达实业有限公司	M28F256-15BI	ST	17+	DIP	6200	100%原装正品现货	询价
深圳市豪迈兴电子有限公司	M28F411-70NSCP	ST	24+	TSOP	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
齐创科技(上海,北京,青岛)有限公司	M28F102-150XK3	ST	23+	PLCC	5000	原装正品,假一罚十	询价

更多M28F供应商更新时间2026-1-31 17:32:00

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