DIL Pitch Terminals High Sensitivity Relay

Features DIL Pitch Terminals .High Sensitivity
Conforms to FCC Part 68 1.5kV Surge and Dielectric 1000VAC
Fully sealed (immersion cleaning). High Reliability bifurcated Contact. Application for Telecommunication EquipmentOffice EquipmentSecurity Alarm SystemsMeasuring instrume

文件：146.92 Kbytes 页数：2 Pages

DBLECTRO

DIL Pitch Terminals .High Sensitivity

文件：358.88 Kbytes 页数：1 Pages

HUAXINAN

华兴安

丝印：M1B；Package：SOT-23；NPN General Purpose Amplifier

■ Features ● Epitaxial planar die construction. ● Complementary PNP type available(MMBT2907)

文件：63.89 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：M1B；Package：SOT-23；NPN General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. ● Switching requiring collector currents up to 500mA.

文件：201.59 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M1B；Package：SOT-23；General Purpose Transistors NPN Silicon

Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：227.33 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：M1B；Package：SOT-23；General Purpose Transistors NPN Silicon

Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：227.33 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：M1B；Package：SOT-23；SWITCHING TRANSISTOR

文件：404.23 Kbytes 页数：4 Pages

HOTTECH

合科泰

丝印：M1B；Package：SOT-23；NPN General Purpose Amplifier

文件：1.05865 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：M1B；Package：SOT-23；NPN General Purpose Amplifier

文件：160.32 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M1B；Package：SOT-523；NPN Silicon Epitaxial Planar Medium Power Transistor

文件：248.57 Kbytes 页数：5 Pages

GWSEMI

唯圣电子