LX5552LU中文资料WLAN Front End Modules (FEM)数据手册Microchip规格书

描述 Description

LX5552 is a high-integration, high performance WLAN front-end module (FEM) for 802.11b/g/n and other applications in the 2.4-2.5GHz frequency range. LX5552 integrates a fully matched InGaP/GaAs Heterojunction Bipolar Transistor (HBT) power amplifier, a low noise amplifier based on InGaAs Enhancement mode pseudo-morphic high electron mobility transistor (E-pHEMT) technology, and a low-cost Depletion mode pHEMT (D-pHEMT) single pole double throw (SPDT) antenna switch in a single package. The Tx path of LX5552 features a two-stage monolithic microwave integrated circuit (MMIC) power amplifier with active bias circuitry, on-chip output power detector, and 50? input/output matching inside the package. With 3.3V supply voltage and 80mA bias current, the Tx path provides about 26dB power gain and +17dBm linear output power, with low total EVM (<3%) for 64QAM/ 54Mbps OFDM. Both gain and power are readily measured at antenna port with the insertion loss of the Tx switch included. The Rx path of LX5552 features small-signal gain of 12.5dB, low noise figure of 2dB, and high input third order intercept point (IIP3) of +5dBm with the insertion loss of the the Rx switch loss included. The LNA consumes about 10mA current with 3.3V supply voltage. LX5552 is available in a 16-pin, 3x3mm micro-lead package (MLPQ-16L). With its high level of functional integration, best-class performance, compact footprint and low profile, LX5552 offers an ideal front-end solution for the ever demanding design requirements of today’s WLAN systems, including 802.11b/g and the latest 11n MIMO applications.  ROHS, PB Free

简介

LX5552LU属于RF/IF射频/中频RFID的射频前端（LNA+PA）。由制造生产的LX5552LU射频前端（LNA + PA）本系列中的产品是各种集成电路，其中集成了射频 (RF) 信号链连接到系统天线的部分中常见的一种或多种功能，如低噪声放大器 (LNA) 和可编程放大器 (PA)。任何给定器件所含的实际功能各不相同，相比旨在提供更高应用灵活性的器件，针对相对较窄应用的器件通常集成更大一部分必要的信号链。