256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL com

文件：167.01 Kbytes 页数：15 Pages

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL comp

文件：167.03 Kbytes 页数：15 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL com

文件：167.01 Kbytes 页数：15 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL comp

文件：167.03 Kbytes 页数：15 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL com

文件：167.01 Kbytes 页数：15 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL comp

文件：167.03 Kbytes 页数：15 Pages

AMICC

联笙电子

256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256E-T is a low operating current 4,194,304- bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL com

文件：167.01 Kbytes 页数：15 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256F-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMICs high performance CMOS process. Features ■ Operating voltage: 2.7V to 3.6V

文件：208.24 Kbytes 页数：14 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256F-T is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMICs high performance CMOS process. Inputs and three-state outputs are TTL comp

文件：159.66 Kbytes 页数：14 Pages

AMICC

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256K X 16 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S16256F-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMICs high performance CMOS process. Features ■ Operating voltage: 2.7V to 3.6V

文件：208.24 Kbytes 页数：14 Pages

AMICC

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