512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-I is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.13 Kbytes 页数：14 Pages

AMICC

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512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-T is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.16 Kbytes 页数：14 Pages

AMICC

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512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-I is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.13 Kbytes 页数：14 Pages

AMICC

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512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-T is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.16 Kbytes 页数：14 Pages

AMICC

联笙电子

512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-I is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.13 Kbytes 页数：14 Pages

AMICC

联笙电子

512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-T is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.16 Kbytes 页数：14 Pages

AMICC

联笙电子

512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-I is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.13 Kbytes 页数：14 Pages

AMICC

联笙电子

512K X 8 BIT LOW VOLTAGE CMOS SRAM

General Description The LP62S4096E-T is a low operating current 4,194,304-bit static random access memory organized as 524,288 words by 8 bits and operates on a low power supply range: 2.7V to 3.3V. It is built using AMICs high performance CMOS process. Features ■ Power supply range: 2.7V to 3.

文件：162.16 Kbytes 页数：14 Pages

AMICC

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MEDIUM POWER PHEMT

DESCRIPTION AND APPLICATIONS The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

文件：35.54 Kbytes 页数：2 Pages

FILTRONIC

Packaged 0.25W Power PHEMT

DESCRIPTION AND APPLICATIONS The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate stru

文件：23.09 Kbytes 页数：2 Pages

FILTRONIC