PUSHBUTTON SWITCHES - ILLUMINATED

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E-SWITCH

30 mm Legend Plates LPxxx (xxx= Title)

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ALTECH

1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

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FILTRONIC

PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

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FILTRONIC

Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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FILTRONIC

Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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FILTRONIC

Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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FILTRONIC

Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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FILTRONIC

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mmx1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recesse

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FILTRONIC

DATA DISPLAY AG LP150X1 15.0 XGA TFT LCD PRELIMINARY SPECIFICATION

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