1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

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1W POWER PHEMT

DESCRIPTION AND APPLICATIONS\nThe LP1500 is an Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25  mm by 1500  mm  Schottky barrier gate. The recessed “mushroom” gate structure min ¨  31.5 dBm Output Power at 1-dB Compression at 18 GHz\n¨  8 dB Power Gain at 18 GHz\n¨  28 dBm Output Power at 1-dB Compression at 3.3V\n¨  45dBm Output IP3 at 18GHz\n¨  50% Power-Added Efficiency;

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PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

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Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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Low Noise, High Linearity Packaged PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” g

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mmx1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recesse

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PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS\nThe LP1500P100 is a packaged Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs)  pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu ¨  31dBm Output Power at 1-dB Compression at 15 GHz\n¨  9 dB Power Gain at 15 GHz\n¨  42 dBm Output IP3 at 15GHz\n¨  60% Power-Added Efficiency;

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半导体放电管

LRC

乐山无线电