PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

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PACKAGED 1W POWER PHEMT

DESCRIPTION AND APPLICATIONS\nThe LP1500P100 is a packaged Aluminum Gallium  Arsenide / Indium Gallium  Arsenide (AlGaAs/InGaAs)  pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x1500 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu ¨  31dBm Output Power at 1-dB Compression at 15 GHz\n¨  9 dB Power Gain at 15 GHz\n¨  42 dBm Output IP3 at 15GHz\n¨  60% Power-Added Efficiency;

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1W PACKAGED POWER PHEMT

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