丝印：LGE3D04065F；Package：TO-252-2L；Silicon Carbide Schottky Diode

Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent SwitchingBehavior Extremely Fast Switching Positive Temperature Coefficient on VF Applications Switch Mode Power Supplies (SMPS) Power Facto

文件：1.87626 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Low power loss,high efficiency  High Frequency Operation  Extremely Fast Switching  Temperature-independent Switching  Positive Temperature Coefficient on VF  Operating Junction Temperature 175℃ Benefits  Re

文件：1.12606 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

4A 650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.34099 Mbytes 页数：9 Pages

SMCDIODE

桑德斯微电子

4A 650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.34099 Mbytes 页数：9 Pages

SMCDIODE

桑德斯微电子