丝印：LGE3D20065D；Package：TO-247-3；Silicon Carbide SchottkyDiode

文件：3.36241 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

碳化硅肖特基

LGE

鲁光电子

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

文件：1.31517 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100% Pure Tin Pb − Free Device All

文件：772.74 Kbytes 页数：11 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.61261 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子