600V/ 7A Trench FS II Fast IGBT

Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat) ⚫ High speed switching ⚫ Positive temperature coefficient in VCE(sat) ⚫ Very tight parameter distribution ⚫ High ruggedness, temperature stable behavior Application ⚫ Air Condition ⚫ Inverters ⚫ Motor drives

文件：977.19 Kbytes 页数：7 Pages

LUGUANG

鲁光电子

N-Channel MOSFET 600V, 7A, 1.15(ohm)

文件：745.05 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

文件：1.2947 Mbytes 页数：8 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.78 Kbytes 页数：2 Pages

ISC

无锡固电