650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.25563 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

文件：1.25563 Mbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

Discrete SiC Schottky Diodes

S3D04065L is a SiC Schottky rectifier packaged in DFN8×8 case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D04065L is ideal for energy sensitive, high frequency applications in ch

SMC

桑德斯微电子

Discrete SiC Schottky Diodes

S3D04065L is a SiC Schottky rectifier packaged in DFN8×8 case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3D04065L is ideal for energy sensitive, high frequency applications in ch

SMC

桑德斯微电子