Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：462.01 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

半桥栅极驱动器

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.\n\n The high-side (floating) section is designed to stand a voltage rail up to 600 V.\n\n The logic inputs are CMOS/TTL compatible d • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •290 mA source, \n •430 mA sink \n• Switching times 75/35 nsec rise/fall with 1 nF load \n• 3.3 V, 5 V CMOS/TTL input comparators with hysteresis \n• Integrated bootstrap diode•;

ST

意法半导体

Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：462.01 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：390.92 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：462.01 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：390.92 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Half-bridge gate driver

Description The L6393 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver

文件：390.92 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Half-bridge gate driver

文件：393.5 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体