L6393数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V.

The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller/DSP.

The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc.

特性 Features

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/nsec in full temperature range
• Driver current capability:
•290 mA source,
•430 mA sink
• Switching times 75/35 nsec rise/fall with 1 nF load
• 3.3 V, 5 V CMOS/TTL input comparators with hysteresis
• Integrated bootstrap diode
• Uncommitted comparator
• Adjustable deadtime
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

简介

L6393属于集成电路（IC）的栅极驱动器。由制造生产的L6393栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。