首页 >L6386E>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

MAX6386XS

SC70/關DFN,Single/DualLow-Voltage,Low-Power關PResetCircuits

MaximMaxim Integrated Products

美信美信半导体

MAX6386XS__D_+T

SC70/μDFN,Single/DualLow-Voltage,Low-PowerμPResetCircuits

GeneralDescription TheMAX6381–MAX6390microprocessor(µP)supervisorycircuitsmonitorpower-supplyvoltagesfrom+1.8Vto+5.0Vwhileconsumingonly3µAofsupplycurrentat+1.8V.WheneverVCCfallsbelowthefactory-setresetthresholds,theresetoutputassertsandremainsassertedfora

MaximMaxim Integrated Products

美信美信半导体

MDT6386

HORNANTENNAS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGA-6386

DC-3000MHz,CascadableSiGeHBTMMICAmplifier

ProductDescription StanfordMicrodevicesSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunction

STANFORD

Stanford Microdevices

SGA-6386

DC-5000MHz,CascadableSiGeHBTMMICAmplifier

TheSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationofemitterjunctionnon

SIRENZA

SIRENZA MICRODEVICES

SGA6386Z

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SGA-6386Z

DC-5000MHz,CascadableSiGeHBTMMICAmplifier

TheSGA-6386isahighperformanceSiGeHBTMMICAmplifier.ADarlingtonconfigurationfeaturing1micronemittersprovideshighFTandexcellentthermalperfomance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurrentbetweenjunctions.Cancellationofemitterjunctionnon

SIRENZA

SIRENZA MICRODEVICES

SGA6386ZSQ

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SGA6386ZSR

DCto5000MHz,CASCADABLESiGeHBTMMICAMPLIFIER

RFMD

RF Micro Devices

SG-BGA-6386

Ballguidepreventsovercompressionofelastomer

IRONWOOD

Ironwood Electronics.

产品属性

  • 产品编号:

    L6386E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    独立式

  • 栅极类型:

    IGBT,N 沟道 MOSFET

  • 电压 - 供电:

    17V(最大)

  • 逻辑电压 - VIL,VIH:

    1.5V,3.6V

  • 电流 - 峰值输出(灌入,拉出):

    400mA,650mA

  • 输入类型:

    反相

  • 上升/下降时间(典型值):

    50ns,30ns

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    14-DIP(0.300",7.62mm)

  • 供应商器件封装:

    14-DIP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14DIP

供应商型号品牌批号封装库存备注价格
ST
23+
8-DIP
26163
询价
STM
24+
28
询价
STMicroelectronics
23+
14-Dip
7750
全新原装优势
询价
STM
22+
原廠原封
5000
原装现货库存.价格优势!!
询价
ST
23+
8-DIP
65600
询价
STMicroelectronics
24+
14-DIP
65200
一级代理/放心采购
询价
STM
24+
原厂封装
7304
原装现货
询价
STM
20+
DIP-14
1001
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
更多L6386E供应商 更新时间2025-5-26 9:01:00