| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
L6388E | High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:219.81 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:219.81 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a 文件:219.81 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
High-voltage high and low side driver 文件:206.26 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
L6388E | 带嵌入式自举二极管的HV高低侧驱动器 The L6388E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respec • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •400 mA source \n •650 mA sink \n• Switching times 70/40 nsec rise/fall with 1 nF load \n• 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down \n• Internal; | ST 意法半导体 | ST | |
L6388E | Package:8-DIP(0.300",7.62mm);包装:管件 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8DIP | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
栅极电源驱动器 | SAVI 盛微先进 | SAVI | ||
Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Package:8-SOIC(0.154",3.90mm 宽);包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR HALF-BRIDGE 8SO | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
产品属性
- 产品编号:
L6388E
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
管件
- 驱动配置:
半桥
- 通道类型:
独立式
- 栅极类型:
IGBT,N 沟道 MOSFET
- 电压 - 供电:
17V(最大)
- 逻辑电压 - VIL,VIH:
1.1V,1.8V
- 电流 - 峰值输出(灌入,拉出):
400mA,650mA
- 输入类型:
非反相
- 上升/下降时间(典型值):
70ns,40ns
- 工作温度:
-40°C ~ 125°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
8-DIP(0.300",7.62mm)
- 供应商器件封装:
8-DIP
- 描述:
IC GATE DRVR HALF-BRIDGE 8DIP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
DIP |
9750 |
一级代理分销/现货/可长期供应!! |
询价 | ||
ST |
23+ |
NA |
24010 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 | ||
STM |
22+ |
原廠原封 |
5000 |
原装现货库存.价格优势!! |
询价 | ||
ST |
23+ |
DIP |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
25+23+ |
DIP |
35470 |
绝对原装正品全新进口深圳现货 |
询价 | ||
STM |
24+ |
324554 |
原装进口现货 |
询价 | |||
ST |
23+ |
8-DIP |
65600 |
询价 | |||
STM |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
25+ |
DIP |
12000 |
一级代理 原装现货 |
询价 | ||
ST |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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