丝印：L5109BMA；Package：SOIC；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

文件：1.20768 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

文件：437.29 Kbytes 页数：17 Pages

TI

德州仪器

丝印：L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

文件：437.29 Kbytes 页数：17 Pages

TI

德州仪器

丝印：L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

文件：437.29 Kbytes 页数：17 Pages

TI

德州仪器