N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES • VDSS(Min.)= 100V, ID= 5A • Drain-Source ON Resista

文件：562.5 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Trench MOSFETs, DPAK(1), 100V, 5A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using DC/DC Converter, Synchronous Rectification and a load switch;

KEC

开益禧

N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES • VDSS(Min.)= 100V, ID= 1.7A • Drain-Source ON Resis

文件：607.64 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL TRENCH MOS FIELD

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES • VDSS(Min.)= 100V, ID= 1.7A • Drain-Source ON Resis

文件：1.04794 Mbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司