N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES • VDSS(Min.)= 100V, ID= 1.7A • Drain-Source ON Resis

文件：607.64 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL TRENCH MOS FIELD

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES • VDSS(Min.)= 100V, ID= 1.7A • Drain-Source ON Resis

文件：1.04794 Mbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR

文件：607.64 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

General Trench MOSFETs, SOT-223, 100V, 1.7A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using DC/DC Converter, Synchronous Rectification and a load switch;

KEC

General Trench MOSFETs, SOT-223, 100V, 1.7A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using DC/DC Converter, Synchronous Rectification and a load switch;

KEC