丝印：ZG；Package：SOT-89；EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • 1W (Mounted on Ceramic Substrate). • Small Flat Package. • Complementary to KTB1260.

文件：118.42 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：ZG；Package：SOT-89；Epitaxial Planar NPN Transistors

Epitaxial Planar NPN Transistors P/b Lead(Pb)-Free

文件：175.88 Kbytes 页数：4 Pages

WEITRON

Power Transistor

FEATURES ● High VCEO,VCEO=80V. ● High IC,IC=1A(DC). ● Good HFE Linearity. ● Low VCE(sat). ● Complement the 2SB1260. APPLICATIONS ● NPN silicon transistor.

文件：204.27 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES Small Flat Package General Purpose Application

文件：505.77 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● General Purpose Application

文件：1.19337 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN Transistors

■ Features ● Small Flat Package ● General Purpose Application

文件：337.03 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：DF；Package：SOT-89；Power Transistor

FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. APPLICATIONS NPN silicon transistor.

文件：496.12 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 100 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：127.41 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Small flat package,complements the KTB1260. Applications General purpose application.

文件：1.00264 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

TRANSISTOR (NPN)

FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Low Collector-Emitter Saturation Voltage

文件：2.01386 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司