TRIPLE DIFFUSED NPN TRANSISTOR

HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES • Complementary to KTB2530. • Recommended for 80W Audio Amplifier Output Stage.

文件：650.53 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES • Adoption of MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. • Complementary to KTB1124.

文件：87.64 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Adoption of MBIT processes, low collector-to-emitter saturation voltage, fast Switching Speed, Large current capacity and wide ASO, Complementary to KTB1124. Applications Voltage regulators ,relay drivers lamp d

文件：1.43039 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features High Power Dissipation :PC=1.5W(Ta=25℃ ). Applications Low collector saturation voltage ,large current.

文件：982.39 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : PC=1.5W(Ta=25°C) • Complementary to KTB1151.

文件：396.38 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)

FOR LOW-FREQUENCY AMPLIFICATION. FEATURES • High foward current transfer ratio hFE. • Low collector to emitter saturation voltage VCE(sat). • High emitter to base voltage VEBO. • Low noise voltage NV. • USM type package, allowing downsizing of the equipment and automatic insertion through th

文件：72.69 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)

FOR LOW-FREQUENCY AMPLIFICATION. FEATURES • High foward current transfer ratio hFE. • Low collector to emitter saturation voltage VCE(sat). • High emitter to base voltage VEBO. • Low noise voltage NV. • ESM type package, allowing downsizing of the equipment and automatic insertion through th

文件：71.13 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

DRIVER APPLICATIONS. FEATURES • AF amplifier, solenoid drivers, LED drivers. • Darlington connection. • High DC current gain. • Very small-sized package permitting sets to be made smaller and slimer. • Complementary to KTB1234T.

文件：83.37 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage and High Current : VCEO=80V, IC=1A. • Low VCE(sat) • Complementary to KTB1241.

文件：251.33 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)

AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB1772.

文件：69.34 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司