EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

* With Built-in Bias Resistors. * Simplify Circuit Design. * Reduce a Quantity of Parts and Manufacturing Process. * High Packing Density.

文件：113.64 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex BRT, TES6, 50V, 0.1A

• With Built-in Bias Resistors\n• Simplify Circuit Design\n• Reduce a Quantity of Parts and Manufacturing Process\n• High Packing Density.;

KEC

开益禧

Transistor with Built-in Bias Resistor

• With Built-in Bias Resistors.\n• Reduce a Quantity of Parts and Manufacturing Process.\n• High Packing Density.;

KEC

开益禧

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes 页数：24 Pages

NSC

国半

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

文件：64.47 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

文件：64.47 Kbytes 页数：12 Pages

NEC

瑞萨