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20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A

20A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi, Ltd.

日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AFGB20N60SFD

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AFGB20N60SFD-BW

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AIKB20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKP20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKW20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AOK20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20N60L

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

供应商型号品牌批号封装库存备注价格
KEC
21+
TO-247(E)
50000
全新原装正品现货,支持订货
询价
KEC
2051+
TO-247(E)
8100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
KEC
2225+
TO-247(E)
12381
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
KEC
202043
TO-247(E)
8660
全新原装,支持实单,假一罚十,德创芯微
询价
KEC
23+
TO-247(E)
10065
原装正品,有挂有货,假一赔十
询价
KEC
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
询价
KEC
22+
TO-247
10000
绝对原装现货热卖
询价
KEC
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
OKI
2020+
SOP-8
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
OKI
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
更多KGF20N60KDA-U/PE供应商 更新时间2024-6-16 13:00:00