P5N60FI

N-Channelenhancementmodepowermostransistor

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.33Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

PJF5N60

600VN-ChannelEnhancementModeMOSFET

FEATURES •5A,600V,RDS(ON)=2.1Ω@VGS=10V,ID=2.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PJP5N60

600VN-ChannelEnhancementModeMOSFET

FEATURES •5A,600V,RDS(ON)=2.1Ω@VGS=10V,ID=2.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

RD5N60

N-CHANNELMOSFETinaTO-252Package

SGP5N60RUF

ShortCircuitRatedIGBT

SGP5N60RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters

SGR5N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

SGS5N60RUF

ShortCircuitRatedIGBT

SGS5N60RUFD

ShortCircuitRatedIGBT

SGW5N60RUF

ShortCircuitRatedIGBT