N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 4.5A • Dr

文件：97.25 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

Planar MOSFETs, TO-220IS(1), 600V, 4.5A

• Fast switching time\n• Low on resistance and gate charge\n• Suitable for using switching mode power supplies.;

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

文件：409.37 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 4.5A • Dr

文件：97.25 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08667 Mbytes 页数：9 Pages

VBSEMI

微碧半导体