N-Channel enhancement mode power mos transistor

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 1.33 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

文件：337.13 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

600V N-Channel Enhancement Mode MOSFET

FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：193.83 Kbytes 页数：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：193.83 Kbytes 页数：5 Pages

PANJIT

強茂

N-CHANNEL MOSFET in a TO-252 Package

文件：304.45 Kbytes 页数：5 Pages

RECTRON

丽正国际