SSM3J327R

Marking：KFG；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

SSM3J328R

Marking：KFH；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=88.4mΩ(max)(@VGS=-1.5V) RDS(ON)=56.0mΩ(max)(@VGS=-1.8V) RDS(ON)=39.7mΩ(max)(@VGS=-2.5V) RDS(ON)=29.8mΩ(max)(@VGS=-4.5V)

SSM3J331R

Marking：KFO；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)1.5-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=150mΩ(max)(@VGS=-1.5V) RDS(ON)=100mΩ(max)(@VGS=-1.8V) RDS(ON)=75mΩ(max)(@VGS=-2.5V) RDS(ON)=55mΩ(max)(@VGS=-4.5V)

SSM3J332R

Marking：KFJ；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications •1.8-Vdrive •LowON-resistance:RDS(ON)=144mΩ(max)(@VGS=-1.8V) RDS(ON)=72.0mΩ(max)(@VGS=-2.5V) RDS(ON)=50.0mΩ(max)(@VGS=-4.5V) RDS(ON)=42.0mΩ(max)(@VGS=-10V)

SSM3J332R

Marking：KFJ；Package：SOT-23；P−CHANNEL MOSFET

FEATURES VDS(V)=-30V RDS(ON)46m(VGS=-10V) RDS(ON)54m(VGS=-4.5V) APPLICATIONS ForMobileComputing LoadSwitch NotebookAdaptorSwitch DC/DCConverter

SSM3J332R

Marking：KFJ；Package：SOT-23；P−CHANNEL MOSFET

FEATURES VDS(V)=-30V RDS(ON)

SSM3J334R

Marking：KFL；Package：2-3Z1S；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○PowerManagementSwitchApplications LowON-resistance:RDS(ON)=71mΩ(max)(@VGS=-10V) RDS(ON)=105mΩ(max)(@VGS=-4.5V) RDS(ON)=136mΩ(max)(@VGS=-4.0V)

SSM3J338R

Marking：KFQ；Package：SOT-23F；MOSFETs Silicon P-Channel MOS

Applications •PowerManagementSwitches Features (1)1.8Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=26.3mΩ(typ.)(@VGS=-1.8V) RDS(ON)=20.1mΩ(typ.)(@VGS=-2.5V) RDS(ON)=15.9mΩ(typ.)(@VGS=-4.5V)

SSM3J340R

Marking：KFV；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •PowerManagementSwitches Features (1)4.0-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=86mΩ(max)(@VGS=-4.0V) RDS(ON)=73mΩ(max)(@VGS=-4.5V) RDS(ON)=45mΩ(max)(@VGS=-10V)

SSM3K324R

Marking：KFD；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications •PowerManagementSwitches •DC-DCConverters Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON)=109mΩ(max)(@VGS=1.8V)