MMBZ5239B

Marking：KF4；Package：SOT-23；SOT-23 Plastic-Encapsulate Diode

ZENERDIODE FEATURES： PlanarDieConstruction 350mWPowerDissipationonFR-4PCB Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssembly

MMBZ5239BS

Marking：KF3；Package：SOT-363；Planar Die Construction

Features •PlanarDieConstruction •DualIsolatedZenersinUltra-SmallSurfaceMountPackage •IdeallySuitedforAutomatedAssemblyProcesses •LeadFree/RoHSCompliant(Note5)

MMBZ5239BW

Marking：KF4；Package：SOT-323；Planar Die Construction

FEATURES PlanarDieConstruction Ultra-SmallSurfaceMountPackage GeneralPurpose IdeallySuitedforAutomatedAssemblyProcesses

MMBZ5240B

Marking：KF5；Package：SOT-23；SOT-23 Plastic-Encapsulate Diode

ZENERDIODE FEATURES： PlanarDieConstruction 350mWPowerDissipationonFR-4PCB Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssembly

MMBZ5240BS

Marking：KF4；Package：SOT-363；Planar Die Construction

Features •PlanarDieConstruction •DualIsolatedZenersinUltra-SmallSurfaceMountPackage •IdeallySuitedforAutomatedAssemblyProcesses •LeadFree/RoHSCompliant(Note5)

MMBZ5240BW

Marking：KF5；Package：SOT-323；Planar Die Construction

FEATURES PlanarDieConstruction Ultra-SmallSurfaceMountPackage GeneralPurpose IdeallySuitedforAutomatedAssemblyProcesses

MMBZ5241BS

Marking：KF5；Package：SOT-363；Planar Die Construction

Features •PlanarDieConstruction •DualIsolatedZenersinUltra-SmallSurfaceMountPackage •IdeallySuitedforAutomatedAssemblyProcesses •LeadFree/RoHSCompliant(Note5)

P6SMB7.5

Marking：KFJ；Package：DO-214AA；Surface Mount Transient Voltage Suppressor

FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Excellentclampingcapability -TypicalIRlessthan1μAabove10V -Halogen-freeaccordingtoIEC61249-2-21definition -Fastresponsetime:Typicallyles

SI1304BDL

Marking：KF**；Package：SOT-323；N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

SSM3J168F

Marking：KFX；Package：SOT-346；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications •High-SpeedSwitching •AnalogSwitches •Interfacing Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4.0Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=1.6Ω(typ.)(VGS=-4.0V) RDS(ON)=1.4Ω(typ.)(VGS=-4.5V) RDS(ON)=1.3