首页 >KB817>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

KB817B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件:213.48 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817-B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件:221.69 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817B-B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件:221.69 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817BC

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件:213.48 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817BC-B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件:221.69 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817BD

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件:213.48 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817BD-B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件:221.69 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817C

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件:213.48 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817C-B

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件:221.69 Kbytes 页数:8 Pages

Kingbright

今台电子

KB817CD

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件:213.48 Kbytes 页数:8 Pages

Kingbright

今台电子

供应商型号品牌批号封装库存备注价格
24+
2000
全新
询价
KINGB
23+
NA
356
专做原装正品,假一罚百!
询价
KINGBRIG
12+
DIP SOP
19442
原装现货
询价
KINGBIRIG
23+
SOP4
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
Kingbrigh
DIP12
15620
一级代理 原装正品假一罚十价格优势长期供货
询价
KINGBRIG
23+
SOP4
8000
只做原装现货
询价
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
询价
KINGBIRIGHT
2406+
DIP/SOP4
3688
优势代理渠道,原装现货,可全系列订货
询价
KINGBR
DIP-42
3200
原装长期供货!
询价
KBE
16+
NA
8800
原装现货,货真价优
询价
更多KB817供应商 更新时间2025-10-6 16:00:00