型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
KB817 | GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta 文件:213.48 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | |
KB817 | TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION.FEATURES\n• Complementary to KTD1047.\n• Recommended for 60W Audio Frequency\n• Amplifier Output Stage. • Complementary to KTD1047.\n• Recommended for 60W Audio Frequency\n• Amplifier Output Stage. ; | KEC | KEC | |
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta 文件:213.48 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta 文件:213.48 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull 文件:221.69 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull 文件:221.69 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta 文件:213.48 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull 文件:221.69 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta 文件:213.48 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright | ||
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull 文件:221.69 Kbytes 页数:8 Pages | Kingbright 今台电子 | Kingbright |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
2000 |
全新 |
询价 | ||||
KINGB |
23+ |
NA |
356 |
专做原装正品,假一罚百! |
询价 | ||
KINGBRIG |
12+ |
DIP SOP |
19442 |
原装现货 |
询价 | ||
KINGBIRIG |
23+ |
SOP4 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Kingbrigh |
DIP12 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
KINGBRIG |
23+ |
SOP4 |
8000 |
只做原装现货 |
询价 | ||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
KINGBIRIGHT |
2406+ |
DIP/SOP4 |
3688 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
KINGBR |
DIP-42 |
3200 |
原装长期供货! |
询价 | |||
KBE |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 |
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