GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件：221.69 Kbytes 页数：8 Pages

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KB817-B - 光电耦合器, Transistor Output, 1通道, 表面安装DIP, 4 引脚, 50 mA, 5 kV, 50 %

The KB817-B is a 1-channel 4-pin general purpose Optically Coupled Isolator containing a GaAS light emitting diode and an NPN silicon phototransistor. The single transistor type optocoupler is suitable for registers, copiers, automatic vending machines, programmable logic controller, signal transmis ·High isolation voltage\n·Lead forming (gull wing) type, for surface mounting\n·Moisture sensitivity level-4\n·2.54mm Lead pitch\n·>=0.6mm Solid insulation thickness between emitting diode and output phototransistor\n·50mA Forward current\n·200mW Total power dissipation;

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今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：213.48 Kbytes 页数：8 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817-B (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. Lead forming (gull

文件：221.69 Kbytes 页数：8 Pages

Kingbright

今台电子

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

文件：213.48 Kbytes 页数：8 Pages

Kingbright

今台电子