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AOU414

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU414L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQV414

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414A

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414A

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414AX

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AZ

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414E

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQW414

GU(GeneralUse)Type[2-Channel(FormB)Type]

ETCList of Unclassifed Manufacturers

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AQW414

HIGHVOLTAGE,PHOTOMOSRELAY

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etc2未分类制造商

供应商型号品牌批号封装库存备注价格
COSMO
22+
DIPSOP6
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
COSMO
24+25+/26+27+
SOP-6.贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
COSMO
23+
SOP6
50000
全新原装正品现货,支持订货
询价
COSMO
12+
DIPSOP
16666
原装现货
询价
冠西
5000
全新原装
询价
COSMO
2339+
DIP
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
COSMO
21+
DIP6
10000
原装现货假一罚十
询价
COSMO
DIP6
68900
原包原标签100%进口原装常备现货!
询价
COSMO
2310+
DIP
3688
优势代理渠道,原装现货,可全系列订货
询价
COSMO
23+
SOP6
8560
受权代理!全新原装现货特价热卖!
询价
更多KAQV414ATR供应商 更新时间2024-5-31 11:10:00