零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µso | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bits NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ | SamsungSamsung Group 三星三星半导体 | Samsung | ||
FLASH MEMORY GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512Mb/256Mb 1.8V NAND Flash Errata GENERALDESCRIPTION Offeredin32Mx8bitor16Mx16bit,theK9F56XXX0Cis256Mbitwithspare8Mbitcapacity.Thedeviceisofferedin1.8Vor3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypica | SamsungSamsung Group 三星三星半导体 | Samsung | ||
512Mb/256Mb 1.8V NAND Flash Errata GENERALDESCRIPTION Offeredin32Mx8bitor16Mx16bit,theK9F56XXX0Cis256Mbitwithspare8Mbitcapacity.Thedeviceisofferedin1.8Vor3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypica | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µso | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bits NAND Flash Memory GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ | SamsungSamsung Group 三星三星半导体 | Samsung | ||
FLASH MEMORY GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64M x 8 Bit NAND Flash Memory GeneralDescription TheK9F1208U0Misa64M(67,108,864)x8bitNANDFlashMemorywithaspare2,048K(2,097,152)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200msonthe528-bytepageandaner | SamsungSamsung Group 三星三星半导体 | Samsung |
详细参数
- 型号:
K9F120
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
64M x 8 Bits NAND Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
SOP |
8500 |
全新原装现货,公司只做原装。 |
询价 | ||
TSOP |
23+ |
16 |
3500 |
询价 | |||
TSOP |
22+ |
FREESCALE |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG/三星 |
22+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Samsung |
2020+ |
BGA |
58 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
20000 |
只做正品原装现货 |
询价 | ||
SAMSUNG/三星 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 |
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