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K9F1208B0B

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µso

SamsungSamsung Group

三星三星半导体

K9F1208B0C

64M x 8 Bits NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung Group

三星三星半导体

K9F1208B0C-P

FLASH MEMORY

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung Group

三星三星半导体

K9F1208D0A

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical

SamsungSamsung Group

三星三星半导体

K9F1208D0A-P

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical

SamsungSamsung Group

三星三星半导体

K9F1208D0A-Y

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bitor32Mx16bit,theK9F12XXX0Ais512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical

SamsungSamsung Group

三星三星半导体

K9F1208D0B

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208D0B-D

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208D0B-Y

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208Q0A

512Mb/256Mb 1.8V NAND Flash Errata

GENERALDESCRIPTION Offeredin32Mx8bitor16Mx16bit,theK9F56XXX0Cis256Mbitwithspare8Mbitcapacity.Thedeviceisofferedin1.8Vor3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypica

SamsungSamsung Group

三星三星半导体

K9F1208Q0A-XXB0

512Mb/256Mb 1.8V NAND Flash Errata

GENERALDESCRIPTION Offeredin32Mx8bitor16Mx16bit,theK9F56XXX0Cis256Mbitwithspare8Mbitcapacity.Thedeviceisofferedin1.8Vor3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypica

SamsungSamsung Group

三星三星半导体

K9F1208Q0B

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208Q0B-D

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208Q0B-F

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208Q0B-H

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208Q0B-P

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung Group

三星三星半导体

K9F1208R0B

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µso

SamsungSamsung Group

三星三星半导体

K9F1208R0C

64M x 8 Bits NAND Flash Memory

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung Group

三星三星半导体

K9F1208R0C-J

FLASH MEMORY

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung Group

三星三星半导体

K9F1208U0

64M x 8 Bit NAND Flash Memory

GeneralDescription TheK9F1208U0Misa64M(67,108,864)x8bitNANDFlashMemorywithaspare2,048K(2,097,152)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200msonthe528-bytepageandaner

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K9F120

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bits NAND Flash Memory

供应商型号品牌批号封装库存备注价格
SAMSUNG
23+
SOP
8500
全新原装现货,公司只做原装。
询价
TSOP
23+
16
3500
询价
TSOP
22+
FREESCALE
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
SAMSUNG/三星
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
Samsung
2020+
BGA
58
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSANG
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG/三星
21+
BGA
20000
只做正品原装现货
询价
SAMSUNG/三星
BGA
265209
假一罚十原包原标签常备现货!
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAMSUNG/三星
21+
BGA
10000
原装现货假一罚十
询价
更多K9F120供应商 更新时间2024-5-30 16:00:00