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K9F1208D0B-D中文资料三星数据手册PDF规格书

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厂商型号

K9F1208D0B-D

功能描述

64M x 8 Bit NAND Flash Memory

文件大小

767.01 Kbytes

页面数量

45

生产厂商

Samsung

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-14 11:09:00

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K9F1208D0B-D规格书详情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15ms(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

产品属性

  • 型号:

    K9F1208D0B-D

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bit NAND Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SAMSUNG
1923+
BGA
8900
公司原装现货特价长期供货欢迎来电咨询
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAM
23+24
原厂
29650
原装现货.优势热卖.终端BOM表可配单
询价
SAMSUNG
24+
BGA
3000
全新原装现货 优势库存
询价
SAMSUNG
22+
BGA
8000
原装正品支持实单
询价
SAMSUNG
24+
BGA
813
询价
原装SAMSUNG
24+
BGA
63200
一级代理/放心采购
询价
TSOP
22+
ALTERA
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价