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K9F1208D0A-P中文资料三星数据手册PDF规格书

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厂商型号

K9F1208D0A-P

功能描述

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

文件大小

748.18 Kbytes

页面数量

46

生产厂商

Samsung

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-14 13:57:00

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K9F1208D0A-P价格和库存,欢迎联系客服免费人工找货

K9F1208D0A-P规格书详情

GENERAL DESCRIPTION

Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input.

FEATURES

• Voltage Supply

- 2.65V device(K9F12XXD0A) : 2.4~2.9V

- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array

- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit

- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit

- Data Register

- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit

- X16 device(K9F1216X0A) : (256 + 8)bit x16bit

• Automatic Program and Erase

- Page Program

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Block Erase :

- X8 device(K9F1208X0A) : (16K + 512)Byte

- X16 device(K9F1216X0A) : ( 8K + 256)Word

• Page Read Operation

- Page Size

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Random Access : 12ms(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F12XXX0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)

- K9F12XXX0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0A-V,F(WSOPI ) is the same device as K9F1208U0A-Y,P(TSOP1) except package type.

产品属性

  • 型号:

    K9F1208D0A-P

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
Samsung
25+
BGA
58
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG/三星
24+
FBGA
13718
只做原装 公司现货库存
询价
SAMSUNG
24+
BGA
813
询价
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG/三星
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SAMSUNG
1923+
BGA
8900
公司原装现货特价长期供货欢迎来电咨询
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAM
23+24
原厂
29650
原装现货.优势热卖.终端BOM表可配单
询价
SAMSUNG
24+
BGA
3000
全新原装现货 优势库存
询价