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K9D1G08V0M中文资料三星数据手册PDF规格书

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厂商型号

K9D1G08V0M

功能描述

64MB & 128MB SmartMediaTM Card

文件大小

657.43 Kbytes

页面数量

37

生产厂商

Samsung

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-14 16:42:00

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K9D1G08V0M价格和库存,欢迎联系客服免费人工找货

K9D1G08V0M规格书详情

GENERAL DESCRIPTION

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

- 2.65V device(K9F1GXXD0M) : 2.4~2.9V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)*

*K9F1GXXQ0M : 80ns

· Fast Write Cycle Time

- Program time : 300ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Cache Program Operation for High Performance Program

· Power-On Auto-Read Operation

· Intelligent Copy-Back Operation

· Unique ID for Copyright Protection

· Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

产品属性

  • 型号:

    K9D1G08V0M

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    64MB & 128MB SmartMediaTM Card

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
22+
BGA
8000
原装正品支持实单
询价
SAM
22+
TSOP
680
全新原装现货!自家库存!
询价
SAMSUNG
23+
TSOP
5000
原装正品,假一罚十
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAM
20+
TSOP
6532
英卓尔原装现货!0755-82566558真实库存!
询价
SAMSUNG
05+
BGA
658
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
Samsung
25+
BGA
58
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAM
24+
TSOP
6
原装现货
询价
SAMSUNG/三星
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价