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K9D1G08V0M中文资料三星数据手册PDF规格书
K9D1G08V0M规格书详情
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
· Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
· Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
· Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)*
*K9F1GXXQ0M : 80ns
· Fast Write Cycle Time
- Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
产品属性
- 型号:
K9D1G08V0M
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
64MB & 128MB SmartMediaTM Card
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 | ||
SAM |
22+ |
TSOP |
680 |
全新原装现货!自家库存! |
询价 | ||
SAMSUNG |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
询价 | ||
SAMSUNG/三星 |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
SAM |
20+ |
TSOP |
6532 |
英卓尔原装现货!0755-82566558真实库存! |
询价 | ||
SAMSUNG |
05+ |
BGA |
658 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
Samsung |
25+ |
BGA |
58 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SAM |
24+ |
TSOP |
6 |
原装现货 |
询价 | ||
SAMSUNG/三星 |
23+ |
TSSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |


