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K9F1208B0B中文资料三星数据手册PDF规格书

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厂商型号

K9F1208B0B

功能描述

64M x 8 Bit NAND Flash Memory

文件大小

1.02953 Mbytes

页面数量

45

生产厂商

Samsung

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-14 23:01:00

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K9F1208B0B价格和库存,欢迎联系客服免费人工找货

K9F1208B0B规格书详情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns(K9F1208R0B : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 1.8V device(K9F1208R0B) : 1.65~1.95V

- 2.7V device(K9F1208B0B) : 2.5~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15µs(Max.)

- Serial Page Access : 50ns(Min.)

(*K9F1208R0B : tRC = 60ns(Min.)

• Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

产品属性

  • 型号:

    K9F1208B0B

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
3908
原装现货,当天可交货,原型号开票
询价
SAMSUNG/三星
24+
FBGA
13718
只做原装 公司现货库存
询价
SAMSUNG/三星
25+
BGA
996880
只做原装,欢迎来电资询
询价
SAMSUNG
22+
BGA
8000
原装正品支持实单
询价
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
询价
SAMSUNG
24+
BGA
813
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG
05+
BGA
658
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
Samsung
25+
BGA
58
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价